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Samsung M378A5244CB0-CTD 4GB
Team Group Inc. DDR4 3000 4GB

Samsung M378A5244CB0-CTD 4GB vs Team Group Inc. DDR4 3000 4GB

Overall score
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Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Overall score
star star star star star
Team Group Inc. DDR4 3000 4GB

Team Group Inc. DDR4 3000 4GB

Differences Specifications Comments

Differences

Samsung M378A5244CB0-CTD 4GB Reasons to consider
Samsung M378A5244CB0-CTD 4GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 17000
    Around 1.25% higher bandwidth
Team Group Inc. DDR4 3000 4GB Reasons to consider
Team Group Inc. DDR4 3000 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 36
    Around -13% lower latency
  • Faster reading speed, GB/s
    16.7 left arrow 15.8
    Average value in the tests
  • Faster write speed, GB/s
    13.1 left arrow 11.8
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378A5244CB0-CTD 4GB
Team Group Inc. DDR4 3000 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 32
  • Read speed, GB/s
    15.8 left arrow 16.7
  • Write speed, GB/s
    11.8 left arrow 13.1
  • Memory bandwidth, mbps
    21300 left arrow 17000
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2497 left arrow 3064

Samsung M378A5244CB0-CTD 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Team Group Inc. DDR4 3000 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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