Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Samsung M378B5173BH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Overall score
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Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Differences

  • Below the latency in the PassMark tests, ns
    23 left arrow 26
    Around 12% lower latency
  • Faster reading speed, GB/s
    16.2 left arrow 13.4
    Average value in the tests
  • Faster write speed, GB/s
    12.6 left arrow 8.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    23 left arrow 26
  • Read speed, GB/s
    13.4 left arrow 16.2
  • Write speed, GB/s
    8.0 left arrow 12.6
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2269 left arrow 2955
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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