RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Compare
Samsung M378B5173BH0-CH9 4GB vs SK Hynix HMA81GU6CJR8N-UH 8GB
Overall score
Samsung M378B5173BH0-CH9 4GB
Overall score
SK Hynix HMA81GU6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5173BH0-CH9 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
27
Around 15% lower latency
Reasons to consider
SK Hynix HMA81GU6CJR8N-UH 8GB
Report a bug
Faster reading speed, GB/s
16.4
13.4
Average value in the tests
Faster write speed, GB/s
11.2
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
27
Read speed, GB/s
13.4
16.4
Write speed, GB/s
8.0
11.2
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2269
2632
Samsung M378B5173BH0-CH9 4GB RAM comparisons
Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB
SK Hynix HMA81GU6CJR8N-UH 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMSO4GX4M1A2133C15 4GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-2400C16-16GFT 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Kingston 99U5474-013.A00LF 2GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Samsung M471B5273CH0-CH9 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMD8GX4M2B3466C18 4GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-2666C15-8GRKB 8GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3200C14-32GTRS 32GB
Kingston 9905403-061.A00LF 2GB
V-GEN D4H8GS24A8 8GB
Mushkin 991586 2GB
Kingston KHX2400C12D4/4GX 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston 99U5712-002.A00G 16GB
Report a bug
×
Bug description
Source link