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Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Samsung M378B5673EH1-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Overall score
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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
  • Faster write speed, GB/s
    7.5 left arrow 6.3
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    24 left arrow 28
    Around -17% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 8500
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 24
  • Read speed, GB/s
    12.7 left arrow 12.7
  • Write speed, GB/s
    7.5 left arrow 6.3
  • Memory bandwidth, mbps
    8500 left arrow 17000
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1988 left arrow 2256

Samsung M378B5673EH1-CF8 2GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
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Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB RAM comparisons

Samsung M323R2GA3BB0-CQKOD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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