Samsung M378B5673EH1-CF8 2GB vs INTENSO 5641160 8GB

Overall score

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score

INTENSO 5641160 8GB

INTENSO 5641160 8GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB

Reasons to consider
Samsung M378B5673EH1-CF8 2GB

INTENSO 5641160 8GB

Reasons to consider
INTENSO 5641160 8GB

Below the latency in the PassMark tests, ns

23 28

Around -22% lower latency
Faster reading speed, GB/s

16.1 12.7

Average value in the tests
Faster write speed, GB/s

10.2 7.5

Average value in the tests
Higher memory bandwidth, mbps

17000 8500

Around 2 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378B5673EH1-CF8 2GB

INTENSO 5641160 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

28 23
Read speed, GB/s

12.7 16.1
Write speed, GB/s

7.5 10.2
Memory bandwidth, mbps

8500 17000

Other

Description

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

1988 2613

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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