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Samsung M378B5673EH1-CF8 2GB
Kingston K6VDX7-HYD 8GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Kingston K6VDX7-HYD 8GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Kingston K6VDX7-HYD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
30
Around 7% lower latency
Faster write speed, GB/s
7.5
7.2
Average value in the tests
Reasons to consider
Kingston K6VDX7-HYD 8GB
Report a bug
Faster reading speed, GB/s
13.5
12.7
Average value in the tests
Higher memory bandwidth, mbps
25600
8500
Around 3.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Kingston K6VDX7-HYD 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
30
Read speed, GB/s
12.7
13.5
Write speed, GB/s
7.5
7.2
Memory bandwidth, mbps
8500
25600
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1066 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1988
2154
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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