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Samsung M378B5673FH0-CH9 2GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Samsung M378B5673FH0-CH9 2GB vs Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Overall score
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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Differences Specifications Comments

Differences

Samsung M378B5673FH0-CH9 2GB Reasons to consider
Samsung M378B5673FH0-CH9 2GB
Report a bug
Patriot Memory (PDP Systems) 2800 C16 Series 8GB Reasons to consider
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 35
    Around -6% lower latency
  • Faster reading speed, GB/s
    16.5 left arrow 14.4
    Average value in the tests
  • Faster write speed, GB/s
    11.4 left arrow 9.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673FH0-CH9 2GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 33
  • Read speed, GB/s
    14.4 left arrow 16.5
  • Write speed, GB/s
    9.5 left arrow 11.4
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2321 left arrow 2913

Samsung M378B5673FH0-CH9 2GB RAM comparisons

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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