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Samsung M378B5773DH0-CH9 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB

Samsung M378B5773DH0-CH9 2GB vs A-DATA Technology AO1P21FC8T1-BSKS 8GB

Overall score
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Overall score
star star star star star
A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

Differences Specifications Comments

Differences

Samsung M378B5773DH0-CH9 2GB Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug
A-DATA Technology AO1P21FC8T1-BSKS 8GB Reasons to consider
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    36 left arrow 39
    Around -8% lower latency
  • Faster reading speed, GB/s
    13.6 left arrow 11.7
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 7.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    39 left arrow 36
  • Read speed, GB/s
    11.7 left arrow 13.6
  • Write speed, GB/s
    7.2 left arrow 8.7
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1749 left arrow 2231

Samsung M378B5773DH0-CH9 2GB RAM comparisons

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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