RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C16-16GTZRC 16GB
Compare
Samsung M378B5773DH0-CH9 2GB vs G Skill Intl F4-3600C16-16GTZRC 16GB
Overall score
Samsung M378B5773DH0-CH9 2GB
Overall score
G Skill Intl F4-3600C16-16GTZRC 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug
Reasons to consider
G Skill Intl F4-3600C16-16GTZRC 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
39
Around -39% lower latency
Faster reading speed, GB/s
19.3
11.7
Average value in the tests
Faster write speed, GB/s
16.5
7.2
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C16-16GTZRC 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
28
Read speed, GB/s
11.7
19.3
Write speed, GB/s
7.2
16.5
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1749
3889
Samsung M378B5773DH0-CH9 2GB RAM comparisons
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-3600C16-16GTZRC 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.CAGPN.AZ50C 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M393A2G40DB1-CRC 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
G Skill Intl F4-2800C14-16GVK 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Golden Empire CL18-20-20 D4-3200 8GB
Samsung M471A5244CB0-CWE 4GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-16GSXWB 16GB
Samsung M471A5244CB0-CWE 4GB
MemxPro Inc. D4S8GHIOFFC 8GB
Kingston KF552C40-16 16GB
G Skill Intl F4-2666C19-16GIS 16GB
Kingston KF552C40-16 16GB
Transcend Information JM3200HLB-16G 16GB
Kingston HP698651-154-MCN 8GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M378A2K43DB1-CVF 16GB
Report a bug
×
Bug description
Source link