Samsung M378B5773DH0-CH9 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Samsung M378B5773DH0-CH9 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Overall score
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Overall score
star star star star star
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 39
    Around -44% lower latency
  • Faster reading speed, GB/s
    18.7 left arrow 11.7
    Average value in the tests
  • Faster write speed, GB/s
    17.8 left arrow 7.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 10600
    Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    39 left arrow 27
  • Read speed, GB/s
    11.7 left arrow 18.7
  • Write speed, GB/s
    7.2 left arrow 17.8
  • Memory bandwidth, mbps
    10600 left arrow 25600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1749 left arrow 3963
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons