RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
31
Around 16% lower latency
Reasons to consider
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Report a bug
Faster reading speed, GB/s
16.7
12.8
Average value in the tests
Faster write speed, GB/s
14.6
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
31
Read speed, GB/s
12.8
16.7
Write speed, GB/s
9.0
14.6
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2143
3509
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
Crucial Technology CT102464BF160B.C16 8GB
Samsung M471B1G73QH0-YK0 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology BL16G26C16U4W.16FE 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston KHX2666C16D4/16GX 16GB
Corsair CMZ16GX3M2A1600C10 8GB
Golden Empire CL14-16-16 D4-2400 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Kingston 9905403-515.A00LF 8GB
Samsung M393A5143DB0-CPB 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Kingston ACR16D3LS1NGG/4G 4GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Corsair CMK16GX4M2Z4000C18 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
A-DATA Technology DDR3 1333G 2GB
Corsair CMSX64GX4M4A2666C18 16GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3600C18-16GTRG 16GB
Golden Empire CL5-5-5DDR2 1GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
Report a bug
×
Bug description
Source link