RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT4G4SFS8266.M8FE 4GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Crucial Technology CT4G4SFS8266.M8FE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
94
Around 72% lower latency
Faster write speed, GB/s
9.0
6.4
Average value in the tests
Reasons to consider
Crucial Technology CT4G4SFS8266.M8FE 4GB
Report a bug
Faster reading speed, GB/s
13.2
12.8
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
94
Read speed, GB/s
12.8
13.2
Write speed, GB/s
9.0
6.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
1390
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Crucial Technology CT4G4SFS8266.M8FE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M393A1G43DB1-CRC 8GB
SpecTek Incorporated PSD34G13332 4GB
Kingston KHX2400C15S4/16G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology C 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Samsung M471A2K43DB1-CWE 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMH128GX4M4E3200C16 32GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CM4X8GF3000C15K4 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3400C16-8GTZ 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3300C16-4GRKD 4GB
Mushkin 991586 2GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Samsung M393B1K70CH0-YH9 8GB
Essencore Limited KD48GU481-26N1600 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Report a bug
×
Bug description
Source link