RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Gloway International (HK) STK2400CL17SNB16GB 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Gloway International (HK) STK2400CL17SNB16GB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Reasons to consider
Gloway International (HK) STK2400CL17SNB16GB 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
26
Around -13% lower latency
Faster reading speed, GB/s
17.5
12.8
Average value in the tests
Faster write speed, GB/s
13.2
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
23
Read speed, GB/s
12.8
17.5
Write speed, GB/s
9.0
13.2
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
3171
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Gloway International (HK) STK2400CL17SNB16GB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
Samsung M391B5673EH1-CH9 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
A-DATA Technology DOVF1B163G2G 2GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Mushkin 99[2/7/4]204F 4GB
Kingston 9905403-447.A00LF 4GB
Corsair CM4B8G1L2666A18S4 8GB
SK Hynix HMT351S6BFR8C-H9 4GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMR32GX4M4C3600C18 8GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMD32GX4M4B3200C16 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMWX16GC3000C16W4D 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Samsung M3 78T2863QZS-CF7 1GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Kingston 99U5474-038.A00LF 4GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Report a bug
×
Bug description
Source link