RAM comparison Samsung M391B5673EH1-CH9 2GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Samsung M391B5673EH1-CH9 2GB vs InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Overall score

Samsung M391B5673EH1-CH9 2GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M391B5673EH1-CH9 2GB

Below the latency in the PassMark tests, ns

26 101

Around 74% lower latency
Faster reading speed, GB/s

12.8 12.1

Average value in the tests
Faster write speed, GB/s

9.0 6.7

Average value in the tests

Reasons to consider
InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Complete list of technical specifications

Samsung M391B5673EH1-CH9 2GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2143 1382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns