Samsung M391B5673EH1-CH9 2GB vs Micron Technology 9ASF1G72PZ-2G9E1 8GB

Overall score

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Overall score

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Differences Specifications Comments

Differences

Samsung M391B5673EH1-CH9 2GB

Reasons to consider
Samsung M391B5673EH1-CH9 2GB

Below the latency in the PassMark tests, ns

26 54

Around 52% lower latency
Faster reading speed, GB/s

12.8 10.4

Average value in the tests
Faster write speed, GB/s

9.0 8.2

Average value in the tests

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Reasons to consider
Micron Technology 9ASF1G72PZ-2G9E1 8GB

Higher memory bandwidth, mbps

23400 10600

Around 2.21 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M391B5673EH1-CH9 2GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

26 54
Read speed, GB/s

12.8 10.4
Write speed, GB/s

9.0 8.2
Memory bandwidth, mbps

10600 23400

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 26
Timings / Clock speed

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)

2143 2259

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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