RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
71
Around 63% lower latency
Faster write speed, GB/s
9.0
8.0
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Report a bug
Faster reading speed, GB/s
14.5
12.8
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
71
Read speed, GB/s
12.8
14.5
Write speed, GB/s
9.0
8.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
1863
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
DSL Memory D4SS1G082SH21A-B 16GB
Avant Technology F6451U64F9333G 4GB
Corsair CM4X4GF3000C15K4 4GB
Samsung M471B5674QH0-YK0 2GB
Apacer Technology 78.CAGSZ.4070B 8GB
A-DATA Technology DDR2 800G 2GB
Kingston 9905702-082.A00G 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Kingston KHX2133C11D3/4GX 4GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Samsung M471B5173DB0-YK0 4GB
Samsung M471A5143SB1-CRC 4GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB
Kingston K1N7HK-ELC 2GB
Panram International Corporation M424016 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMWX8GD3600C18W2D 8GB
ASint Technology SSA302G08-EGN1C 4GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK8GX4M2A2400C14 4GB
A-DATA Technology DDR2 800G 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Report a bug
×
Bug description
Source link