RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
27
Around 4% lower latency
Reasons to consider
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Report a bug
Faster reading speed, GB/s
18.7
12.8
Average value in the tests
Faster write speed, GB/s
17.8
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
27
Read speed, GB/s
12.8
18.7
Write speed, GB/s
9.0
17.8
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2143
3963
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kllisre HMA81GU6AFR8N-VK 8GB
Samsung M391B5673EH1-CH9 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Kingston HP698651-154-MCN 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A4G43AB2-CVF 32GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston 9905624-004.A00G 4GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
Kingston 9905403-515.A00LF 8GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9965640-006.A01G 32GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Corsair CMW16GX4M2D3000C16 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M378A5244CB0-CVF 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3733C17-8GTZSW 8GB
Report a bug
×
Bug description
Source link