RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Compare
Samsung M391B5673FH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Overall score
Samsung M391B5673FH0-CH9 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673FH0-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
37
Around 24% lower latency
Faster reading speed, GB/s
13.3
9.5
Average value in the tests
Faster write speed, GB/s
8.5
7.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
37
Read speed, GB/s
13.3
9.5
Write speed, GB/s
8.5
7.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2213
1949
Samsung M391B5673FH0-CH9 2GB RAM comparisons
Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2953EZ3-CE6 1GB
Kingston KHX2666C16/16G 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
Crucial Technology CT51264BA1339.C16F 4GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Kingston 99U5474-028.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMV16GX4M1A2133C15 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston ACR26D4S9D8ME-16 16GB
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C
Patriot Memory (PDP Systems) PSD48G320081 8GB
Team Group Inc. UD5-6400 16GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMW32GX4M2C3200C16 16GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GU6CJR8N-XN 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
Samsung M378B5273CH0-CH9 4GB
Panram International Corporation W4U2666PS-8GC19 8GB
Kingston 99U5471-030.A00LF 8GB
AMD R7S44G2606U1S 4GB
Report a bug
×
Bug description
Source link