RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673FH0-CH9 2GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Compare
Samsung M391B5673FH0-CH9 2GB vs Micron Technology 36ASF4G72PZ-2G6D1 32GB
Overall score
Samsung M391B5673FH0-CH9 2GB
Overall score
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673FH0-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
48
Around 42% lower latency
Faster reading speed, GB/s
13.3
11.7
Average value in the tests
Reasons to consider
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Report a bug
Faster write speed, GB/s
10.7
8.5
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673FH0-CH9 2GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
48
Read speed, GB/s
13.3
11.7
Write speed, GB/s
8.5
10.7
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2213
2568
Samsung M391B5673FH0-CH9 2GB RAM comparisons
Samsung M391B5673EH1-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BF160BJ.C8F 4GB
Samsung M393A1G40EB1-CRC 8GB
Samsung M393B2G70BH0-CK0 16GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Kingston ACR16D3LS1NGG/4G 4GB
Corsair CMW32GX4M2C3200C16 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston ACR26D4U9S1KA-4 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
G Skill Intl F5-6400J3239G16G 16GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK32GX4M2A2400C14 16GB
SK Hynix DDR2 800 2G 2GB
V-GEN D4H8GL26A8TS6 8GB
SK Hynix HYMP112S64CP6-S6 1GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Kingston 9965525-018.A00LF 4GB
Corsair CMD64GX4M8A2666C15 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905700-013.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Samsung M471B5173DB0-YK0 4GB
Corsair CM4X4GF3000C15K4 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Report a bug
×
Bug description
Source link