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Samsung M393A1G40DB0-CPB 8GB
Micron Technology 8ATF51264AZ-2G1AY 4GB

Samsung M393A1G40DB0-CPB 8GB vs Micron Technology 8ATF51264AZ-2G1AY 4GB

Overall score
star star star star star
Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Overall score
star star star star star
Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Differences Specifications Comments

Differences

Samsung M393A1G40DB0-CPB 8GB Reasons to consider
Samsung M393A1G40DB0-CPB 8GB
Report a bug
Micron Technology 8ATF51264AZ-2G1AY 4GB Reasons to consider
Micron Technology 8ATF51264AZ-2G1AY 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 49
    Around -75% lower latency
  • Faster reading speed, GB/s
    13.8 left arrow 10.9
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 28
  • Read speed, GB/s
    10.9 left arrow 13.8
  • Write speed, GB/s
    8.7 left arrow 8.7
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2427 left arrow 2443

Samsung M393A1G40DB0-CPB 8GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

Micron Technology 8ATF51264AZ-2G1AY 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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