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Samsung M393A1G40DB0-CPB 8GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Compare
Samsung M393A1G40DB0-CPB 8GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB
Overall score
Samsung M393A1G40DB0-CPB 8GB
Overall score
Micron Technology 9ASF51272PZ-2G3B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393A1G40DB0-CPB 8GB
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Below the latency in the PassMark tests, ns
49
53
Around 8% lower latency
Faster reading speed, GB/s
10.9
10.1
Average value in the tests
Faster write speed, GB/s
8.7
8.0
Average value in the tests
Reasons to consider
Micron Technology 9ASF51272PZ-2G3B1 4GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
49
53
Read speed, GB/s
10.9
10.1
Write speed, GB/s
8.7
8.0
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2427
2319
Samsung M393A1G40DB0-CPB 8GB RAM comparisons
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Micron Technology 9ASF51272PZ-2G3B1 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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