RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-CK0 8GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
Compare
Samsung M393B1G70BH0-CK0 8GB vs Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
Overall score
Samsung M393B1G70BH0-CK0 8GB
Overall score
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-CK0 8GB
Report a bug
Reasons to consider
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
Report a bug
Below the latency in the PassMark tests, ns
45
51
Around -13% lower latency
Faster reading speed, GB/s
15.8
9.8
Average value in the tests
Faster write speed, GB/s
14.5
8.1
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-CK0 8GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
51
45
Read speed, GB/s
9.8
15.8
Write speed, GB/s
8.1
14.5
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2208
3102
Samsung M393B1G70BH0-CK0 8GB RAM comparisons
TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB
Gold Key Technology Co Ltd NMSO432F82-3200E 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston HX316C10F/4 4GB
Kingston KHX1866C9D3/8GX 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 76.D305G.D060B 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3600C17-16GTZSW 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C16-4GRR 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston ACR26D4U9D8MH-16 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston K821PJ-MID 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX3200C18D4/16G 16GB
Report a bug
×
Bug description
Source link