RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Compare
Samsung M393B1G70BH0-YK0 8GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Overall score
Samsung M393B1G70BH0-YK0 8GB
Overall score
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
49
Around -88% lower latency
Faster reading speed, GB/s
15.6
10.2
Average value in the tests
Faster write speed, GB/s
11.6
8.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
26
Read speed, GB/s
10.2
15.6
Write speed, GB/s
8.1
11.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2465
2808
Samsung M393B1G70BH0-YK0 8GB RAM comparisons
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70BH0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-4000C16-16GVK 16GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-2800C15-4GTZB 4GB
Samsung M393B1K70CH0-YH9 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
AMD R538G1601U2S-UO 8GB
Avant Technology W6451U66J5213ND 4GB
A-DATA Technology DDR4 2666 8GB
Samsung M471A2K43CB1-CRCR 16GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Kingston KHX1600C9D3/8G 8GB
Apacer Technology GD2.1542WS.003 8GB
Crucial Technology CT51264BA160B.M16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
Samsung M393B5170GB0-CK0 4GB
Kingston ASU21D4U5S8MB-8 8GB
Report a bug
×
Bug description
Source link