RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-YK0 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Compare
Samsung M393B1G70BH0-YK0 8GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Overall score
Samsung M393B1G70BH0-YK0 8GB
Overall score
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Reasons to consider
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
49
Around -96% lower latency
Faster reading speed, GB/s
17.3
10.2
Average value in the tests
Faster write speed, GB/s
13.7
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
25
Read speed, GB/s
10.2
17.3
Write speed, GB/s
8.1
13.7
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2465
2994
Samsung M393B1G70BH0-YK0 8GB RAM comparisons
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB RAM comparisons
Kingston 9905471-002.A00LF 2GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMK32GX4M2C3200C18 16GB
AMD AE34G2139U2 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
Samsung M386B4G70DM0-CMA4 32GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M386A8K40BM1-CRC 64GB
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2400C17-8GNT 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3000C15-4GTZ 4GB
Kingston 9905471-006.A01LF 4GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Kllisre M378A5143EB2-CRC 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4000C18-8GTZ 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Report a bug
×
Bug description
Source link