RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70CH0-CH9 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Compare
Samsung M393B1K70CH0-CH9 8GB vs Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Overall score
Samsung M393B1K70CH0-CH9 8GB
Overall score
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70CH0-CH9 8GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
32
44
Around -38% lower latency
Faster reading speed, GB/s
15.7
11.2
Average value in the tests
Faster write speed, GB/s
11.0
8.1
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70CH0-CH9 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
32
Read speed, GB/s
11.2
15.7
Write speed, GB/s
8.1
11.0
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 12 14 15
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2293
2528
Samsung M393B1K70CH0-CH9 8GB RAM comparisons
EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB RAM comparisons
SK Hynix HMT41GS6BFR8A-PB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Samsung M393B1K70CH0-CH9 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Kingston K531R8-MIN 4GB
AMD R744G2400U1S-UO 4GB
Kingston 99U5403-036.A00G 4GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Panram International Corporation D4N2666PS-16G 16GB
Samsung M378B5273DH0-CH9 4GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2800C17-8GIS 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 99U5295-011.A00LF 2GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
G Skill Intl F4-3200C16-8GTZR 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
SK Hynix HYMP112S64CP6-S6 1GB
Apacer Technology 78.CAGRN.40C0B 8GB
Samsung M378B5673FH0-CH9 2GB
Samsung M3 78T2953EZ3-CF7 1GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3200C16-8GRKB 8GB
‹
›
Report a bug
×
Bug description
Source link