Samsung M393B1K70CH0-CH9 8GB
Micron Technology 4ATF51264HZ-2G6E3 4GB

Samsung M393B1K70CH0-CH9 8GB vs Micron Technology 4ATF51264HZ-2G6E3 4GB

Overall score
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Differences

  • Below the latency in the PassMark tests, ns
    31 left arrow 44
    Around -42% lower latency
  • Faster reading speed, GB/s
    16.6 left arrow 11.2
    Average value in the tests
  • Faster write speed, GB/s
    12.5 left arrow 8.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 31
  • Read speed, GB/s
    11.2 left arrow 16.6
  • Write speed, GB/s
    8.1 left arrow 12.5
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2293 left arrow 2605
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons