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Samsung M393B1K70CH0-CH9 8GB
Micron Technology CT4G4DFS8213.8FA11 4GB

Samsung M393B1K70CH0-CH9 8GB vs Micron Technology CT4G4DFS8213.8FA11 4GB

Overall score
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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Overall score
star star star star star
Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Differences Specifications Comments

Differences

Samsung M393B1K70CH0-CH9 8GB Reasons to consider
Samsung M393B1K70CH0-CH9 8GB
Report a bug
Micron Technology CT4G4DFS8213.8FA11 4GB Reasons to consider
Micron Technology CT4G4DFS8213.8FA11 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 44
    Around -26% lower latency
  • Faster reading speed, GB/s
    15 left arrow 11.2
    Average value in the tests
  • Faster write speed, GB/s
    12.0 left arrow 8.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1K70CH0-CH9 8GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 35
  • Read speed, GB/s
    11.2 left arrow 15.0
  • Write speed, GB/s
    8.1 left arrow 12.0
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2293 left arrow 2654

Samsung M393B1K70CH0-CH9 8GB RAM comparisons

EVGA 08G-D3-2133-MR 4GB
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Micron Technology CT4G4DFS8213.8FA11 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
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