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Crucial Technology CT51264BF160B.M16F 4GB
Shenzhen Technology Co Ltd 8GB

Crucial Technology CT51264BF160B.M16F 4GB vs Shenzhen Technology Co Ltd 8GB

Overall score
star star star star star
Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

Overall score
star star star star star
Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

Differences Specifications Comments

Differences

Crucial Technology CT51264BF160B.M16F 4GB Reasons to consider
Crucial Technology CT51264BF160B.M16F 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 32
    Around 13% lower latency
Shenzhen Technology Co Ltd 8GB Reasons to consider
Shenzhen Technology Co Ltd 8GB
Report a bug
  • Faster reading speed, GB/s
    15.9 left arrow 11.8
    Average value in the tests
  • Faster write speed, GB/s
    11.9 left arrow 8.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology CT51264BF160B.M16F 4GB
Shenzhen Technology Co Ltd 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 32
  • Read speed, GB/s
    11.8 left arrow 15.9
  • Write speed, GB/s
    8.2 left arrow 11.9
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1854 left arrow 2831

Crucial Technology CT51264BF160B.M16F 4GB RAM comparisons

Samsung M471B5173QH0-YK0 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB

Shenzhen Technology Co Ltd 8GB RAM comparisons

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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