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Crucial Technology CT51264BF160B.M16F 4GB
Shenzhen Technology Co Ltd 8GB

Crucial Technology CT51264BF160B.M16F 4GB vs Shenzhen Technology Co Ltd 8GB

总分
star star star star star
Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分
star star star star star
Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

差异 规格 评论

差异

Crucial Technology CT51264BF160B.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 13% 更低的延时
Shenzhen Technology Co Ltd 8GB 需要考虑的原因
Shenzhen Technology Co Ltd 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BF160B.M16F 4GB
Shenzhen Technology Co Ltd 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 32
  • 读取速度，GB/s
    11.8 left arrow 15.9
  • 写入速度，GB/s
    8.2 left arrow 11.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1854 left arrow 2831

Crucial Technology CT51264BF160B.M16F 4GB RAM的比较

Samsung M471B5173QH0-YK0 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB

Shenzhen Technology Co Ltd 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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