PNY Electronics 4GBH2X02E99927-16 4GB vs PNY Electronics 2GBBEAUDCBA 2GB

总分

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分

PNY Electronics 2GBBEAUDCBA 2GB

PNY Electronics 2GBBEAUDCBA 2GB

差异规格评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB

需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB

报告一个错误

低于PassMark测试中的延时，ns

63 69

左右 9% 更低的延时
更快的写入速度，GB/s

5.0 4.8

测试中的平均数值

PNY Electronics 2GBBEAUDCBA 2GB

需要考虑的原因
PNY Electronics 2GBBEAUDCBA 2GB

报告一个错误

更快的读取速度，GB/s

6.3 6.1

测试中的平均数值

规格

完整的技术规格清单

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 2GBBEAUDCBA 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

63 69
读取速度，GB/s

6.1 6.3
写入速度，GB/s

5.0 4.8
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1274 1148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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