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PNY Electronics 4GBH2X02E99927-16 4GB
PNY Electronics 2GBBEAUDCBA 2GB

PNY Electronics 4GBH2X02E99927-16 4GB vs PNY Electronics 2GBBEAUDCBA 2GB

总分
star star star star star
PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分
star star star star star
PNY Electronics 2GBBEAUDCBA 2GB

PNY Electronics 2GBBEAUDCBA 2GB

差异 规格 评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB 需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    63 left arrow 69
    左右 9% 更低的延时
  • 更快的写入速度，GB/s
    5.0 left arrow 4.8
    测试中的平均数值
PNY Electronics 2GBBEAUDCBA 2GB 需要考虑的原因
PNY Electronics 2GBBEAUDCBA 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6.3 left arrow 6.1
    测试中的平均数值

规格

完整的技术规格清单
PNY Electronics 4GBH2X02E99927-16 4GB
PNY Electronics 2GBBEAUDCBA 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    63 left arrow 69
  • 读取速度，GB/s
    6.1 left arrow 6.3
  • 写入速度，GB/s
    5.0 left arrow 4.8
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 1148

PNY Electronics 4GBH2X02E99927-16 4GB RAM的比较

AMD R7416G2133U2S 16GB
Kingston KTP9W1-MIE 16GB

PNY Electronics 2GBBEAUDCBA 2GB RAM的比较

Nanya Technology NT256T64UH4B0FY-37 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
内存RAM
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
G Skill Intl F4-3600C16-8GTRG 8GB
G Skill Intl F4-3600C16-8GTRG 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3600C16-8GTRG 8GB
G Skill Intl F4-3600C16-8GTRG 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851U6CJR6N-VK 4GB
SK Hynix HMA851U6CJR6N-VK 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905663-016.A00G 16GB
Kingston 9905663-016.A00G 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology 78.B1GM3.AF00B 4GB
Apacer Technology 78.B1GM3.AF00B 4GB
内存RAM
Kingston LV32D4S2S8HD-8 8GB
Kingston LV32D4S2S8HD-8 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CM4X4GF2400Z16K4 4GB
Corsair CM4X4GF2400Z16K4 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
EVGA 16G-D4-2400-MR 8GB
EVGA 16G-D4-2400-MR 8GB
内存RAM