Samsung M393B2G70BH0-CK0 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 54

左右 -184% 更低的延时
更快的读取速度，GB/s

19.5 9.2

测试中的平均数值
更快的写入速度，GB/s

15.8 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 19
读取速度，GB/s

9.2 19.5
写入速度，GB/s

8.1 15.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMV4GX3M1B1600C11 4GB

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Samsung M471A2K43CBCBCRC 16GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

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Corsair CMK16GX4M2B4266C19 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Apacer Technology 78.CAGP7.C7Z0B 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Kingston 9965662-019.A00G 32GB

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Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB