PNY Electronics 4GBH2X02E99927-16 4GB vs PNY Electronics 2GBBEAUDCBA 2GB

Punteggio complessivo

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

Punteggio complessivo

PNY Electronics 2GBBEAUDCBA 2GB

PNY Electronics 2GBBEAUDCBA 2GB

Differenze Specifiche tecniche Commenti

Differenze

PNY Electronics 4GBH2X02E99927-16 4GB

Motivi da considerare
PNY Electronics 4GBH2X02E99927-16 4GB

Al di sotto della latenza nei test PassMark, ns

63 69

Intorno 9% latenza inferiore
Velocità di scrittura più elevata, GB/s

5.0 4.8

Valore medio nei test

PNY Electronics 2GBBEAUDCBA 2GB

Motivi da considerare
PNY Electronics 2GBBEAUDCBA 2GB

Velocità di lettura più elevata, GB/s

6.3 6.1

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 2GBBEAUDCBA 2GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

63 69
Velocità di lettura, GB/s

6.1 6.3
Velocità di scrittura, GB/s

5.0 4.8
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1274 1148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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