Nanya Technology NT256T64UH4B0FY-37 256MB vs PNY Electronics 2GBBEAUDCBA 2GB

总分

Nanya Technology NT256T64UH4B0FY-37 256MB

Nanya Technology NT256T64UH4B0FY-37 256MB

总分

PNY Electronics 2GBBEAUDCBA 2GB

PNY Electronics 2GBBEAUDCBA 2GB

差异规格评论

差异

Nanya Technology NT256T64UH4B0FY-37 256MB

需要考虑的原因
Nanya Technology NT256T64UH4B0FY-37 256MB

报告一个错误

低于PassMark测试中的延时，ns

47 69

左右 32% 更低的延时

PNY Electronics 2GBBEAUDCBA 2GB

需要考虑的原因
PNY Electronics 2GBBEAUDCBA 2GB

报告一个错误

更快的读取速度，GB/s

6.3 3

测试中的平均数值
更快的写入速度，GB/s

4.8 1,779.3

测试中的平均数值
更高的内存带宽，mbps

10600 4200

左右 2.52 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT256T64UH4B0FY-37 256MB

PNY Electronics 2GBBEAUDCBA 2GB

主要特点

存储器类型

DDR2 DDR3
PassMark中的延时，ns

47 69
读取速度，GB/s

3,448.1 6.3
写入速度，GB/s

1,779.3 4.8
内存带宽，mbps

4200 10600

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC3-10600, 1.5V, CAS Supported: 6 8 9
时序/时钟速度

4-4-4-12 / 533 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

298 1148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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