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Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB

Samsung M393B1K70CH0-YH9 8GB vs G Skill Intl F4-3200C16-16GTZKO 16GB

Overall score
star star star star star
Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Overall score
star star star star star
G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

Differences Specifications Comments

Differences

Samsung M393B1K70CH0-YH9 8GB Reasons to consider
Samsung M393B1K70CH0-YH9 8GB
Report a bug
G Skill Intl F4-3200C16-16GTZKO 16GB Reasons to consider
G Skill Intl F4-3200C16-16GTZKO 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 49
    Around -133% lower latency
  • Faster reading speed, GB/s
    18.7 left arrow 10.1
    Average value in the tests
  • Faster write speed, GB/s
    14.3 left arrow 7.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 21
  • Read speed, GB/s
    10.1 left arrow 18.7
  • Write speed, GB/s
    7.8 left arrow 14.3
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2070 left arrow 3437

Samsung M393B1K70CH0-YH9 8GB RAM comparisons

Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB

G Skill Intl F4-3200C16-16GTZKO 16GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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