RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Compare
Samsung M393B5270CH0-CH9 4GB vs Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Faster write speed, GB/s
9.0
6.5
Average value in the tests
Reasons to consider
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
42
Around -75% lower latency
Faster reading speed, GB/s
13.9
10.6
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
24
Read speed, GB/s
10.6
13.9
Write speed, GB/s
9.0
6.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
2113
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-2666C18-32GRS 32GB
Samsung M393B5270CH0-CH9 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C19-16GVRB 16GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3200C16-8GSXKB 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK8GX4M1D2666C16 8GB
A-DATA Technology DQVE1908 512MB
Corsair CMT64GX4M8X3000C15 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D240FSA.16FADG 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMU32GX4M2A2666C16 16GB
Kingston 9905403-447.A00LF 4GB
Mushkin 99[2/7/4]197F 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Kingston KHX1600C9S3L/4G 4GB
Asgard VMA45UH-MEC1U2AW2 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Report a bug
×
Bug description
Source link