RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Apacer Technology AQD-D4U8GN26-SE 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Apacer Technology AQD-D4U8GN26-SE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
16.4
Average value in the tests
Reasons to consider
Apacer Technology AQD-D4U8GN26-SE 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
104
Around -395% lower latency
Faster write speed, GB/s
7.8
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
21
Read speed, GB/s
3,192.0
16.4
Write speed, GB/s
2,404.5
7.8
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
2414
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Apacer Technology AQD-D4U8GN26-SE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2133C15-4GRS 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905471-071.A00LF 8GB
Kingston KHX2400C14D4/16G 16GB
SK Hynix DDR2 800 2G 2GB
Kingston 9905665-011.A00G 4GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hewlett-Packard 7EH68AA# 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-4133C19-8GTZKW 8GB
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology W642GU42J5213N 16GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-4400C18-8GTRG 8GB
Report a bug
×
Bug description
Source link