RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Corsair CMU32GX4M2C3200C16 16GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Corsair CMU32GX4M2C3200C16 16GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Corsair CMU32GX4M2C3200C16 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
17.8
Average value in the tests
Faster write speed, GB/s
2,404.5
13.4
Average value in the tests
Reasons to consider
Corsair CMU32GX4M2C3200C16 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
104
Around -235% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Corsair CMU32GX4M2C3200C16 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
31
Read speed, GB/s
3,192.0
17.8
Write speed, GB/s
2,404.5
13.4
Memory bandwidth, mbps
6400
17000
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
786
3403
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Corsair CMU32GX4M2C3200C16 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-4000C16-16GTZR 16GB
Kingston 9965525-018.A00LF 4GB
Panram International Corporation D4U2666P-8G 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Samsung M393B2G70BH0-YK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
A-DATA Technology DDR3 1600 4GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix GKE160SO102408-3000 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2800C15-8GRK 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston 9905701-011.A00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
A-DATA Technology DDR3 1600 4GB
Apacer Technology 78.CAGP7.AZ20B 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C16-8GRSB 8GB
Samsung M471B5273CH0-CH9 4GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Samsung M378A5244CB0-CTD 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
Report a bug
×
Bug description
Source link