RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BL16G32C16U4W.M16FE1 16GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
18.2
Average value in the tests
Faster write speed, GB/s
2,404.5
15.1
Average value in the tests
Reasons to consider
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
104
Around -271% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
28
Read speed, GB/s
3,192.0
18.2
Write speed, GB/s
2,404.5
15.1
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
3666
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-444.A00LF 4GB
Inmos + 256MB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-4400C16-8GVK 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston LV32D4U2S8HD-8X 8GB
Kingston KHX1866C9D3/8GX 8GB
PUSKILL PJ16TFK1GM8 16GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Kingston 9905403-156.A00LF 2GB
AMD R748G2400S2S 8GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2800C16-8GVR 8GB
PNY Electronics PNY 2GB
Samsung M378A1K43BB2-CRC 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 99U5700-032.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW32GX4M4Z3200C16 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CMV4GX4M1A2666C18 4GB
Samsung M391B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Report a bug
×
Bug description
Source link