RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
18.2
Average value in the tests
Faster write speed, GB/s
2,404.5
14.1
Average value in the tests
Reasons to consider
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
104
Around -373% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
22
Read speed, GB/s
3,192.0
18.2
Write speed, GB/s
2,404.5
14.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
3012
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Corsair CML8GX3M2A1600C9 4GB
Hewlett-Packard 7EH55AA# 8GB
Kingston ACR256X64D3S1333C9 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Kingston 99U5315-023.A00LF 512MB
Teikon TMA81GS6AFR8N-UHSC 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Kingston KVR533D2N4 512MB
Golden Empire CL14-16-16 D4-3000 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9965684-005.A00G 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C14-32GTRG 32GB
G Skill Intl F3-2400C11-8GSR 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Samsung M393B5270CH0-CH9 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMK8GX4M1D3000C16 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
Kingston 99U5428-040.A00LF 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
Report a bug
×
Bug description
Source link