RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 16ATF2G64HZ-2G3E2 16GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
16.5
Average value in the tests
Faster write speed, GB/s
2,404.5
13.6
Average value in the tests
Reasons to consider
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
104
Around -285% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
27
Read speed, GB/s
3,192.0
16.5
Write speed, GB/s
2,404.5
13.6
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
2892
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-028.A00LF 4GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Golden Empire CL15-17-17 D4-2666 8GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3000C15-8GVR 8GB
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston KHX2133C15S4/8G 8GB
Kingston 99U5474-037.A00LF 4GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
PUSKILL DDR3 1600 8G 8GB
SK Hynix HMA84GL7MMR4N-TF 32GB
Samsung M395T2863QZ4-CF76 1GB
Patriot Memory (PDP Systems) 2400 C17 8GB
Crucial Technology CT102464BA160B.M16 8GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Heoriady M471A1K43BB1-CRC 16GB
Report a bug
×
Bug description
Source link