RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 9ASF1G72PZ-2G6D1 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
11
Average value in the tests
Reasons to consider
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
104
Around -235% lower latency
Faster write speed, GB/s
8.4
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
31
Read speed, GB/s
3,192.0
11.0
Write speed, GB/s
2,404.5
8.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
2271
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB RAM comparisons
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Kingston 9905678-012.A00G 8GB
Kingston 99U5403-468.A00LF 8GB
Kingston HP26D4S9S8MHF-8 8GB
Kingston 99U5403-050.A00LF 4GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
Samsung M471B5773DH0-CH9 2GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Kingston 99U5474-022.A00LF 2GB
Kingston HP32D4U2S1ME-8 8GB
A-DATA Technology DDR3 1600 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Kingston 9905471-006.A01LF 4GB
DSL Memory D4SH1G081SH26A-C 8GB
A-DATA Technology DQVE1908 512MB
Hewlett-Packard 7EH68AA# 16GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMH32GX4M2Z3200C16 16GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
AMD AE34G1601U1 4GB
Samsung M471A4G43MB1-CTD 32GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston MSI26D4S9S8HJ-8 8GB
Report a bug
×
Bug description
Source link