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Samsung M395T2863QZ4-CF76 1GB
SK Hynix HMA451U6MFR8N-TF 4GB

Samsung M395T2863QZ4-CF76 1GB vs SK Hynix HMA451U6MFR8N-TF 4GB

Overall score
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Overall score
star star star star star
SK Hynix HMA451U6MFR8N-TF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

Differences Specifications Comments

Differences

Samsung M395T2863QZ4-CF76 1GB Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 13.4
    Average value in the tests
  • Faster write speed, GB/s
    2,404.5 left arrow 10.3
    Average value in the tests
SK Hynix HMA451U6MFR8N-TF 4GB Reasons to consider
SK Hynix HMA451U6MFR8N-TF 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    36 left arrow 104
    Around -189% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
SK Hynix HMA451U6MFR8N-TF 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    104 left arrow 36
  • Read speed, GB/s
    3,192.0 left arrow 13.4
  • Write speed, GB/s
    2,404.5 left arrow 10.3
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    786 left arrow 2466

Samsung M395T2863QZ4-CF76 1GB RAM comparisons

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

SK Hynix HMA451U6MFR8N-TF 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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