RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Compare
Samsung M395T5160QZ4-CE66 2GB vs Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Overall score
Samsung M395T5160QZ4-CE66 2GB
Overall score
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T5160QZ4-CE66 2GB
Report a bug
Below the latency in the PassMark tests, ns
75
77
Around 3% lower latency
Faster reading speed, GB/s
2
11.9
Average value in the tests
Reasons to consider
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Report a bug
Faster write speed, GB/s
6.9
2,072.7
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
77
Read speed, GB/s
2,730.3
11.9
Write speed, GB/s
2,072.7
6.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
858
1517
Samsung M395T5160QZ4-CE66 2GB RAM comparisons
Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston HP32D4U2S8ME-16 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston KHX2400C12D4/4GX 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905711-002.A00G 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLS8G4S240FSD.16FBD 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CM4X8GF2133C13K4 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905678-102.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
Corsair CM2X1024-6400C4 1GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Report a bug
×
Bug description
Source link