RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-4133C19-8GTZKW 8GB
Compare
Samsung M395T5160QZ4-CE66 2GB vs G Skill Intl F4-4133C19-8GTZKW 8GB
Overall score
Samsung M395T5160QZ4-CE66 2GB
Overall score
G Skill Intl F4-4133C19-8GTZKW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T5160QZ4-CE66 2GB
Report a bug
Faster reading speed, GB/s
2
17.9
Average value in the tests
Faster write speed, GB/s
2,072.7
15.0
Average value in the tests
Reasons to consider
G Skill Intl F4-4133C19-8GTZKW 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
75
Around -188% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-4133C19-8GTZKW 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
26
Read speed, GB/s
2,730.3
17.9
Write speed, GB/s
2,072.7
15.0
Memory bandwidth, mbps
5300
17000
Other
Description
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
858
3486
Samsung M395T5160QZ4-CE66 2GB RAM comparisons
Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB
G Skill Intl F4-4133C19-8GTZKW 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-4133C19-8GTZKW 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X16GE2666C16K4 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMK8GX4M1A2400C14 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2133C15-8GNS 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
SK Hynix HMA82GS6CJR8N-XN 16GB
Team Group Inc. Vulcan-1600 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
Samsung M391B5673EH1-CH9 2GB
Kingston KF2666C13D4/8GX 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M474A1G43DB0-CPB 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
AMD AE34G1601U1 4GB
Kingston 99U5700-027.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston CBD24D4S7D8ME-16 16GB
Kingston 9905471-071.A00LF 8GB
Corsair CMW32GX4M4Z4000C18 8GB
Report a bug
×
Bug description
Source link