Samsung M4 70T2864QZ3-CF7 1GB vs InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Overall score

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Overall score

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Differences Specifications Comments

Differences

Samsung M4 70T2864QZ3-CF7 1GB

Reasons to consider
Samsung M4 70T2864QZ3-CF7 1GB

Faster reading speed, GB/s

4 16.6

Average value in the tests
Faster write speed, GB/s

2,201.1 13.4

Average value in the tests

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Reasons to consider
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Below the latency in the PassMark tests, ns

23 74

Around -222% lower latency
Higher memory bandwidth, mbps

21300 6400

Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M4 70T2864QZ3-CF7 1GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

74 23
Read speed, GB/s

4,178.4 16.6
Write speed, GB/s

2,201.1 13.4
Memory bandwidth, mbps

6400 21300

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

508 3169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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