Samsung M4 70T2864QZ3-CF7 1GB vs Micron Technology 8ATF1G64HZ-2G6H1 8GB

Overall score

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Overall score

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Differences Specifications Comments

Differences

Samsung M4 70T2864QZ3-CF7 1GB

Reasons to consider
Samsung M4 70T2864QZ3-CF7 1GB

Faster reading speed, GB/s

4 14

Average value in the tests

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Reasons to consider
Micron Technology 8ATF1G64HZ-2G6H1 8GB

Below the latency in the PassMark tests, ns

37 74

Around -100% lower latency
Faster write speed, GB/s

9.7 2,201.1

Average value in the tests
Higher memory bandwidth, mbps

21300 6400

Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M4 70T2864QZ3-CF7 1GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

74 37
Read speed, GB/s

4,178.4 14.0
Write speed, GB/s

2,201.1 9.7
Memory bandwidth, mbps

6400 21300

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

508 2277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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