RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2864QZ3-CF7 1GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Compare
Samsung M4 70T2864QZ3-CF7 1GB vs Nanya Technology NT8GA64D88CX3S-JR 8GB
Overall score
Samsung M4 70T2864QZ3-CF7 1GB
Overall score
Nanya Technology NT8GA64D88CX3S-JR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2864QZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
14.2
Average value in the tests
Reasons to consider
Nanya Technology NT8GA64D88CX3S-JR 8GB
Report a bug
Below the latency in the PassMark tests, ns
38
74
Around -95% lower latency
Faster write speed, GB/s
9.8
2,201.1
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2864QZ3-CF7 1GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
74
38
Read speed, GB/s
4,178.4
14.2
Write speed, GB/s
2,201.1
9.8
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
508
2451
Samsung M4 70T2864QZ3-CF7 1GB RAM comparisons
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB
Nanya Technology NT8GA64D88CX3S-JR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2864QZ3-CF7 1GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393B2G70BH0-YK0 16GB
Corsair CMK64GX4M8A2666C16 8GB
Kingston 9905403-156.A00LF 2GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Kingston KP223C-ELD 2GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Kingston KHX3200C18D4/8G 8GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
Kingston 9905471-002.A00LF 2GB
Samsung M393A1G40EB1-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Kingston ACR16D3LS1NGG/2G 2GB
Samsung M378A1K43EB2-CVF 8GB
Kingston 99U5474-022.A00LF 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
Report a bug
×
Bug description
Source link