RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2953EZ3-CE6 1GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
Below the latency in the PassMark tests, ns
73
76
Around 4% lower latency
Faster reading speed, GB/s
3
15.1
Average value in the tests
Reasons to consider
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Report a bug
Faster write speed, GB/s
7.9
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
73
76
Read speed, GB/s
3,510.5
15.1
Write speed, GB/s
1,423.3
7.9
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
476
1859
Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2953EZ3-CE6 1GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Kingston 99U5469-045.A00LF 4GB
Apacer Technology GD2.1527CS.001 8GB
Crucial Technology CT102464BF160B.C16 8GB
Samsung M378A2K43CB1-CRC 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3733C17-8GTZSW 8GB
Avant Technology F641GU67F9333G 8GB
Kingston XJ69DF-MIE 8GB
Samsung DDR3 8GB 1600MHz 8GB
Avant Technology W641GU42J5213NC 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-3466C16-8GTZSK 8GB
Samsung M471B5773DH0-CK0 2GB
Crucial Technology CB8GU2400.C8ET 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Elpida EBJ10UE8BAFA-AE-E 1GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMK64GX4M2Z4000C18 32GB
Kingston 9905316-106.A02LF 1GB
Avant Technology W641GU42J5213NC 8GB
Apacer Technology 78.01G86.9H50C 1GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Golden Empire CL14-14-14 D4-2400 16GB
Report a bug
×
Bug description
Source link