RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2953EZ3-CE6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
Faster reading speed, GB/s
3
11.1
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
73
Around -115% lower latency
Faster write speed, GB/s
9.5
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
73
34
Read speed, GB/s
3,510.5
11.1
Write speed, GB/s
1,423.3
9.5
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
476
2319
Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB RAM comparisons
Samsung M378A1K43BB1-CPB 8GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2953EZ3-CE6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Micron Technology 16JTF25664AZ-1G4F1 2GB
SK Hynix GKE800UD102408-2400 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Essencore Limited KD44GU481-26N1600 4GB
Kingston HP669238-071-HYC 4GB
Kingston XN205T-MIE 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston CBD26D4U9S8ME-8 8GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 9905678-110.A00G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905678-014.A00G 4GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-4133C19-8GTZR 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C16-16GVS 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3200C16-4GVRB 4GB
Kingston 9905471-002.A00LF 2GB
Asgard VMA45UG-MEC1U2AW2 8GB
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 18HTF12872AY-800F1 1GB
DSL Memory D4SS1G082SH21A-B 16GB
Report a bug
×
Bug description
Source link