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Samsung M4 70T2953EZ3-CE6 1GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Samsung M4 70T2953EZ3-CE6 1GB vs Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Overall score
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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Differences Specifications Comments

Differences

Samsung M4 70T2953EZ3-CE6 1GB Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 18.2
    Average value in the tests
Patriot Memory (PDP Systems) 3400 C16 Series 8GB Reasons to consider
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 73
    Around -170% lower latency
  • Faster write speed, GB/s
    15.3 left arrow 1,423.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    73 left arrow 27
  • Read speed, GB/s
    3,510.5 left arrow 18.2
  • Write speed, GB/s
    1,423.3 left arrow 15.3
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    476 left arrow 3628

Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons

Samsung M4 70T2864EH3-CF7 1GB
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Patriot Memory (PDP Systems) 3400 C16 Series 8GB RAM comparisons

TwinMOS 8DPT5MK8-TATP 2GB
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RAM Latency Calculator
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